The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Apr. 17, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Li-Yen Fang, Tainan, TW;
Jung-Chih Tsao, Tainan, TW;
Yao-Hsiang Liang, Hsinchu, TW;
Yu-Ku Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD, Hsinchu, TW;
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a substrate with a dielectric disposed thereon, wherein the dielectric has a recess formed by a plurality of exposed surfaces; forming a conductive film on the plurality of exposed surfaces; applying a surface agent to the recess so that the surface agent adheres to a portion of the conductive film; immersing the substrate into an electroplating solution comprising metallic ions; and applying a bias to the conductive film in order to fill metallic material in the recess.