The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Oct. 30, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Xunyuan Zhang, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Sean X. Lin, Watervliet, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 21/288 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/288 (2013.01); H01L 29/401 (2013.01); H01L 29/41766 (2013.01); H01L 29/42372 (2013.01); H01L 29/456 (2013.01); H01L 29/495 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

One illustrative method disclosed includes, among other things, forming a gate contact opening in a layer of insulating material, performing at least one etching process through the gate contact opening to remove a gate cap layer and to expose the gate structure, selectively growing a metal material that is conductively coupled to an upper surface of the gate structure such that the grown metal material contacts all of the sidewalls of the gate contact opening and an air space is formed between a bottom of the grown metal material and a conductive source/drain structure, and forming one or more conductive materials in the gate contact opening above the grown metal material.


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