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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9853102 B1

PDFFull Text
Date of Patent:
Dec. 26, 2017

Filed:

Aug. 08, 2014

Tunnel field-effect transistor

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Teng-Chun Tsai, Hsinchu, TW;

Li-Ting Wang, Hsinchu, TW;

Cheng-Tung Lin, Jhudong Township, TW;

De-Fang Chen, Hsinchu, TW;

Chih-Tang Peng, Zhubei, TW;

Chien-Hsun Wang, Hsinchu, TW;

Hung-Ta Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Chuong A Luu

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/51 (2006.01); H01L 29/739 (2006.01); B82Y 10/00 (2011.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/105 (2013.01); B82Y 10/00 (2013.01); H01L 21/265 (2013.01); H01L 21/823418 (2013.01); H01L 21/823462 (2013.01); H01L 21/823468 (2013.01); H01L 21/823487 (2013.01); H01L 21/823493 (2013.01); H01L 27/088 (2013.01); H01L 29/068 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0657 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/1041 (2013.01); H01L 29/42376 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/665 (2013.01); H01L 29/66068 (2013.01); H01L 29/66356 (2013.01); H01L 29/66439 (2013.01); H01L 29/66553 (2013.01); H01L 29/66666 (2013.01); H01L 29/66977 (2013.01); H01L 29/7391 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01); H01L 29/1608 (2013.01);
Abstract

A tunnel field-effect transistor and method fabricating the same are provided. The tunnel field-effect transistor includes a drain region, a source region with opposite conductive type to the drain region, a channel region disposed between the drain region and the source region, a metal gate layer disposed around the channel region, and a high-k dielectric layer disposed between the metal gate layer and the channel region.

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