The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Jun. 26, 2015
Applicant:
Canon Anelva Corporation, Kawasaki-shi, JP;
Inventors:
Assignee:
CANON ANELVA CORPORATION, Kawasaki-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/04 (2006.01); H01J 37/24 (2006.01); H01J 37/08 (2006.01); H01J 37/305 (2006.01); H01J 37/20 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/243 (2013.01); H01J 37/045 (2013.01); H01J 37/08 (2013.01); H01J 37/20 (2013.01); H01J 37/305 (2013.01); H01J 37/3056 (2013.01); H01J 37/32422 (2013.01);
Abstract
An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.