The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Dec. 09, 2013
Cabot Microelectronics Corporation, Aurora, IL (US);
Dmitry Dinega, Aurora, IL (US);
Sairam Shekhar, Manassas, VA (US);
Renhe Jia, Naperville, IL (US);
Daniel Mateja, Oswego, IL (US);
Cabot Microelectronics Corporation, Aurora, IL (US);
Abstract
The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.