The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Jul. 13, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Lilly Su, ChuBei, TW;
Pang-Yen Tsai, Jhu-bei, TW;
Tze-Liang Lee, Hsinchu, TW;
Chii-Horng Li, Jhu-Bei, TW;
Yen-Ru Lee, Hsinchu, TW;
Ming-Hua Yu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first gate stack and a second gate stack over a substrate, an isolation structure in the substrate, a first epitaxial (epi) material in the substrate between the first gate stack and the isolation structure, and a second epi material in the substrate between the first gate stack and the second gate stack. The first gate stack is between the isolation structure and the second gate stack. The first epi material includes a first upper surface having a first crystal plane. The second epi material includes a second upper surface having a second crystal plane and a third upper surface having a third crystal plane, and first crystal plane is different from both the second crystal plane and the third crystal plane.