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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9842761 B1

PDFFull Text
Date of Patent:
Dec. 12, 2017

Filed:

Jan. 27, 2017

Mechanisms for forming finfets with different fin heights

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tsung-Yu Chiang, New Taipei, TW;

Chung-Wei Lin, Toufen Township, TW;

Kuang-Hsin Chen, Jung-Li, TW;

Bor-Zen Tien, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Phuc Dang

Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 21/762 (2006.01); H01L 21/263 (2006.01); H01L 21/266 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/266 (2013.01); H01L 21/2636 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and a second fin partially surrounded by a second isolation structure. The second isolation structure has a dopant concentration higher than that of the first isolation structure, and a height difference is between a top surface of the first isolation structure and a top surface of the second isolation structure.

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Chiang, Tsung-Yu. (2017). Mechanisms for forming finfets with different fin heights (U.S. Patent No. 9842761). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9842761

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