The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Aug. 05, 2016
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jaspreet S. Gandhi, Boise, ID (US);

Wayne H. Huang, Boise, ID (US);

James M. Derderian, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 25/075 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/40 (2006.01); H01L 25/04 (2014.01); H01L 23/34 (2006.01); H01L 25/00 (2006.01); H01L 23/367 (2006.01); H01L 23/42 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/00 (2013.01); H01L 23/34 (2013.01); H01L 23/4012 (2013.01); H01L 23/49827 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/81 (2013.01); H01L 25/043 (2013.01); H01L 25/065 (2013.01); H01L 25/0756 (2013.01); H01L 25/50 (2013.01); H01L 23/3675 (2013.01); H01L 23/42 (2013.01); H01L 23/49811 (2013.01); H01L 2224/05599 (2013.01); H01L 2224/11 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16503 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81815 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/05032 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

Interconnect structures with improved conductive properties are disclosed herein. In one embodiment, an interconnect structure can include a first conductive member coupled to a first semiconductor die and a second conductive member coupled to second semiconductor die. The first conductive member includes a recessed surface defining a depression. The second conductive member extends at least partially into the depression of the first conductive member. A bond material within the depression can at least partially encapsulate the second conductive member and thereby bond the second conductive member to the first conductive member.


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