The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Aug. 21, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Chung H. Lam, Peekskill, NY (US);
Chung-Hsun Lin, White Plains, NY (US);
Darsen D. Lu, Mount Kisco, NY (US);
Philip J. Oldiges, Lagrangeville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 29/08 (2006.01); H01L 45/00 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 21/31105 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/42376 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/785 (2013.01); H01L 45/06 (2013.01);
Abstract
Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source region having multiple sides, forming at least one drain region having multiple sides, forming at least one channel region having multiple sides, forming at least one gate region around the multiple sides of the at least one channel region and forming the at least one gate region around the multiple sides of the at least one drain region.