The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jun. 17, 2014
Asml Netherlands B.v., Veldhoven, NL;
Andrey Alexandrovich Nikipelov, Eindhoven, NL;
Olav Waldemar Vladimir Frijns, Rosmalen, NL;
Gosse Charles De Vries, Veldhoven, NL;
Erik Roelof Loopstra, Eindhoven, NL;
Vadim Yevgenyevich Banine, Deurne, NL;
Pieter Willem Herman De Jager, Middelbeers, NL;
Rilpho Ludovicus Donker, Veldhoven, NL;
Han-Kwang Nienhuys, Utrecht, NL;
Borgert Kruizinga, Zoetermeer, NL;
Wouter Joep Engelen, Veldhoven, NL;
Otger Jan Luiten, Veldhoven, NL;
Johannes Antonius Gerardus Akkermans, Veldhoven, NL;
Leonardus Adrianus Gerardus Grimminck, Veldhoven, NL;
Vladimir Litvinenko, Veldhoven, NL;
ASML NETHERLANDS B.V., Veldhoven, NL;
Abstract
A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.