The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Jan. 10, 2014
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Takanori Kondo, Tokyo, JP;

Takahiro Jingu, Tokyo, JP;

Masaaki Ito, Tokyo, JP;

Masami Ikota, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/30 (2006.01); G01Q 60/24 (2010.01); G01B 11/24 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01B 11/303 (2013.01); G01B 11/24 (2013.01); G01Q 60/24 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); G01B 2210/56 (2013.01);
Abstract

The invention discloses a technique that estimates micro roughness from a total sum of detection signals from plural detection systems and signal ratios, using a light scattering method. The technique rotates and translates a wafer at high speed to measure the entire surface of the wafer with high throughput. The relationship between the micro roughness and the intensity of scattered light varies according to a material of the wafer and a film thickness thereof. Moreover, calibration of an apparatus is also necessary. Thus, for instance, the invention provides a technique that has a function of correcting an optically acquired detection result using a sample which is substantially the same as a measurement target and makes the optically acquired detection result come close to a result measured by an apparatus, such as an AFM, using a different measurement principle.


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