The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Sep. 29, 2014
Windbond Electronics Corp., Taichung, TW;
Hsiu-Han Liao, Hsinchu, TW;
Ting-Ying Shen, Chiayi, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
The invention provides a non-volatile memory device and methods for fabricating the same. The non-volatile memory device includes a non-volatile memory cell including a first transistor and a second transistor disposed on a substrate. The first and second transistors commonly use a first source region. A first gate of the first transistor and a second gate of the second transistor are different portions of a word line. First and second resistive switching elements are coupled to a first drain region of the first transistor and a second drain region of the second transistor. A first source line is coupled to the source region. First and second bit lines are coupled to the first and second resistive switching elements. The first source line, the first and second bit lines belong to a metal layer and are parallel to each other.