The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Mar. 22, 2017
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Jhih-Yang Yan, Taipei, TW;

Samuel C. Pan, Hsinchu, TW;

Chee Wee Liu, Hsinchu, TW;

Hung-Yu Yeh, Taichung, TW;

Da-Zhi Zhang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 21/306 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method includes providing a substrate having a mesa, forming a first opening in the mesa, the first opening being surrounded by first inner sidewalls of the mesa exposed by the first opening. The method further includes etching from a first one of the first inner sidewalls of the mesa to form a first vertical recess, the first vertical recess having a wide end and a narrow end, with the narrow end defining a first vertically recessed channel region, and forming a first gate structure over the first vertically recessed channel region.


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