The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Sep. 14, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yen-Chun Huang, New Taipei, TW;
Ting-Ting Chen, New Taipei, TW;
Yu-Chung Su, Hsin-Chu, TW;
Ling-Fu Nieh, Taipei, TW;
Pin-Chuan Su, Hsin-Chu, TW;
Teng-Chun Tsai, Hsin-Chu, TW;
Tai-Chun Huang, New Taipei, TW;
Joy Cheng, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
FinFET structures and methods of forming the same are disclosed. In a method, a recess is formed exposing a plurality of semiconductor fins on a wafer. A dummy contact material is formed in the recess. The dummy contact material contains carbon. The dummy contact material is cured with one or more baking steps. The one or more baking steps harden the dummy contact material. A first portion of the dummy contact material is replaced with an inter-layer dielectric. A second portion of the dummy contact material is replaced with a plurality of contacts. The plurality of contacts are electrically coupled to source/drain regions of the plurality of semiconductor fins.