The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Jan. 10, 2013
Air Products and Chemicals, Inc., Allentown, PA (US);
Manchao Xiao, San Diego, CA (US);
Ronald Martin Pearlstein, San Marcos, CA (US);
Richard Ho, Anaheim, CA (US);
Xinjian Lei, Vista, CA (US);
Steven Gerard Mayorga, Oceanside, CA (US);
Daniel P. Spence, Carlsbad, CA (US);
VERSUM MATERIALS US, LLC, Allentown, PA (US);
Abstract
A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR)Rand a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR)R; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R(RO)Si—R—Si(OR)Rand a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (RO)R(X)Si—R—Si(OR)Rwherein at least one or all of the Rand Rsubstituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.