The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Dec. 15, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Joanna Chaw Yane Yin, Hsinchu, TW;

Chi-Hsi Wu, Hsinchi, TW;

Kuo-Chiang Ting, Hsinchu, TW;

Chen Kuang-Hsin, Jung-Li, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01);
Abstract

The present disclosure provides many different embodiments of a FinFET device that provide one or more improvements over the prior art. In one embodiment, a FinFET includes a semiconductor substrate and a plurality of fins having a first height and a plurality of fin having a second height on the semiconductor substrate. The second height may be less than the first height.


Find Patent Forward Citations

Yin, Joanna Chaw Yane. (2017). Finfet device (U.S. Patent No. 9805984). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9805984

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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