The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jun. 08, 2016
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Shang Chen, Tokyo, JP;
Toshiharu Watarai, Tokyo, JP;
Takahiro Onuma, Tokyo, JP;
Dai Ishikawa, Tokyo, JP;
Kunitoshi Namba, Tokyo, JP;
Assignee:
ASM IP HOLDING B.V., Almerè, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7685 (2013.01); H01L 21/32051 (2013.01); H01L 21/32055 (2013.01); H01L 21/76823 (2013.01); H01L 21/76826 (2013.01); H01L 23/53228 (2013.01); H01L 23/53266 (2013.01);
Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.