The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Apr. 19, 2012
Shunsuke Fukami, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Tadahiko Sugibayashi, Tokyo, JP;
Hideo Ohno, Miyagi, JP;
Shoji Ikeda, Miyagi, JP;
Michihiko Yamanouchi, Miyagi, JP;
Shunsuke Fukami, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Tadahiko Sugibayashi, Tokyo, JP;
Hideo Ohno, Miyagi, JP;
Shoji Ikeda, Miyagi, JP;
Michihiko Yamanouchi, Miyagi, JP;
NEC CORPORATION, Tokyo, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
Abstract
A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.