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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9799603 B1

PDFFull Text
Date of Patent:
Oct. 24, 2017

Filed:

Jan. 27, 2016

Semiconductor device structure and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kai-Fang Cheng, Taoyuan, TW;

Chi-Lin Teng, Taichung, TW;

Hai-Ching Chen, Hsinchu, TW;

Hsin-Yen Huang, New Taipei, TW;

Tien-I Bao, Taoyuan, TW;

Jung-Hsun Tsai, Taoyuan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

S V Clark

Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/7681 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate. The first dielectric layer has a first opening exposing the first conductive structure. The semiconductor device structure includes a cover layer covering a first inner wall of the first opening. The cover layer has a second opening exposing the first conductive structure. The cover layer includes a metal oxide. The semiconductor device structure includes a second conductive structure filled in the first opening and surrounded by the cover layer. The second conductive structure is electrically connected to the first conductive structure.

Find Patent Forward Citations

Cheng, Kai-Fang. (2017). Semiconductor device structure and method for forming the same (U.S. Patent No. 9799603). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9799603

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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