The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jun. 25, 2015
Applied Materials, Inc., Santa Clara, CA (US);
He Ren, San Jose, CA (US);
Mehul B. Naik, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Priyanka Dash, Menlo Park, CA (US);
Bhaskar Kumar, Santa Clara, CA (US);
Alexandros T. Demos, Fremont, CA (US);
APPLIED MATERIAL, INC., Santa Clara, CA (US);
Abstract
A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.