The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Jul. 08, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zhaohui Ma, Singapore, SG;

Wei Zhou, Singapore, SG;

Chee Chung So, Singapore, SG;

Soo Loo Ang, Singapore, SG;

Aibin Yu, Singapore, SG;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3107 (2013.01); H01L 23/3128 (2013.01); H01L 23/544 (2013.01); H01L 24/94 (2013.01); H01L 24/96 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/54433 (2013.01); H01L 2223/54486 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/18161 (2013.01);
Abstract

Methods of protecting semiconductor devices may involve forming trenches in streets between stacks of semiconductor dice on regions of a semiconductor wafer. A protective material may be positioned between the die stacks and in the trenches, after which the wafer is thinned from a side opposite the die stacks to expose the protective material in the trenches. Semiconductor devices comprising stacks of dice and corresponding base semiconductor dice comprising wafer regions are separated from one another by cutting through the protective material along the streets and in the trenches. The protective material covers at least sides of each die stack as well as side surfaces of the corresponding base semiconductor die.


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