The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Nov. 10, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chen-Yuan Kao, Hsin-Chu, TW;

Hung-Wen Su, Hsin-Chu, TW;

Chih-Yi Chang, Hsin-Chu, TW;

Liang-Yueh Ou Yang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/288 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/288 (2013.01); H01L 21/32134 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 21/76898 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00014 (2013.01);
Abstract

A method of forming a metal layer may include forming an opening in a substrate; forming a liner over sidewalls of the opening; filling the opening with a first metal; etching a top surface of the first metal to form a recessed top surface below a top surface of the substrate; and exposing the recessed top surface of the first metal to a solution, the solution containing a second metal different from the first metal, the exposing causing the recessed top surface of the first metal to attract the second metal to form a cap layer over the recessed top surface of the first metal.


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