The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Mar. 17, 2017
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Ming Sheng Xu, Singapore, SG;

Ching-Long Tsai, Singapore, SG;

Hua-Kuo Lee, Taipei, TW;

Guangjun Huang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02063 (2013.01); H01L 21/31116 (2013.01); H01L 21/76807 (2013.01); H01L 2224/45147 (2013.01); H01L 2924/01029 (2013.01);
Abstract

A method of cleaning post-etch residues on a copper line includes providing a copper line which is divided into a first region and a second region. A dielectric layer is formed on the copper line. After that, the dielectric layer is etched to form openings in the dielectric layer. A number of openings within the first region is more than a number of openings in the second region. During the etching process, a potential difference is formed between the first region and the second region of the copper line. Finally, the dielectric layer and the copper line are cleaned by a solution with a PH value. The PH value has a special relation with the potential difference.


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