The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Mar. 09, 2016
Applicant:

Spts Technologies Limited, Newport, GB;

Inventors:

Daniel T Archard, Rhonda Cynon Taf, GB;

Stephen R Burgess, Gwent, GB;

Mark I Carruthers, Newport, GB;

Andrew Price, Cardiff, GB;

Keith E Buchanan, Monmouthshire, GB;

Katherine Crook, Newport, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01J 37/32 (2006.01); C23C 16/513 (2006.01);
U.S. Cl.
CPC ...
C23C 16/455 (2013.01); C23C 16/513 (2013.01); H01J 37/32633 (2013.01); H01J 37/32834 (2013.01);
Abstract

A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.


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