The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Feb. 27, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;

Inventors:

Bo-Jr Huang, Tainan, TW;

William Wu Shen, Hsinchu, TW;

Chin-Her Chien, Chungli, TW;

Chin-Chou Liu, Jhubei, TW;

Yun-Han Lee, Baoshan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/48 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/66 (2006.01); H01Q 1/22 (2006.01); H01Q 9/04 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/486 (2013.01); H01L 23/49827 (2013.01); H01L 23/66 (2013.01); H01Q 1/2283 (2013.01); H01Q 1/48 (2013.01); H01Q 9/0407 (2013.01); H01L 23/481 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/1423 (2013.01); H01L 2924/157 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15788 (2013.01);
Abstract

Some embodiments relate to a semiconductor module comprising a low-cost integrated antenna that uses a conductive backside structure in conjunction with a ground metal layer to form a large ground plane with a small silicon area. In some embodiments, the integrated antenna structure has an excitable element that radiates electromagnetic radiation. An on-chip ground plane, located on a first side of an interposer substrate, is positioned below the excitable element. A compensation ground plane, located on an opposing side of the interposer substrate, is connected to the ground plane by one or more through-silicon vias (TSVs) that extend through the interposer substrate. The on-chip ground plane and the compensation ground collectively act to reflect the electromagnetic radiation generated by the excitable element, so that the compensation ground improves the performance of the on-chip ground plane.


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