The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Sep. 13, 2016
International Business Machines Corporation, Armonk, NY (US);
Sean D. Burns, Hopewell Junction, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Matthew E. Colburn, Schenectady, NY (US);
Nelson M. Felix, Briarcliff Manor, NY (US);
Sivananda K. Kanakasabapathy, Niskayuna, NY (US);
Yann A. M. Mignot, Slingerlands, NY (US);
Christopher J. Penny, Saratoga Springs, NY (US);
Roger A. Quon, Rhinebeck, NY (US);
Nicole A. Saulnier, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for manufacturing a semiconductor device includes forming a plurality of mandrels on a dielectric layer, conformally depositing a spacer layer on the plurality of mandrels, removing a portion of the spacer layer from a top surface of at least one of the plurality of mandrels, removing the at least one of the plurality of mandrels to create at least one opening, and filling the at least opening with a cut fill material, wherein the cut fill material comprises the same material as a material of the spacer layer.