The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Jan. 16, 2014
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Toshifumi Honda, Tokyo, JP;

Takahiro Urano, Tokyo, JP;

Hidetoshi Nishiyama, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/88 (2006.01); G01N 21/956 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
G01N 21/8851 (2013.01); G01N 21/9501 (2013.01); G01N 21/956 (2013.01); G01N 2021/8887 (2013.01); G01N 2021/9513 (2013.01);
Abstract

In an defect inspection method and device, in order to detect a minute defect present on a surface of a sample with a high degree of sensitivity, a defect inspection method includes imaging the same region of a sample in a plurality of image acquisition conditions and acquiring a plurality of images, processing the plurality of acquired images and extracting a defect candidate, clipping a partial image including the extracted defect candidate and a neighboring image of the defect candidate from the acquired images based on position information of the extracted defect candidate, obtaining feature quantities of the defect candidates in the plurality of clipped partial images, associating the defect candidates that have the same coordinates on the sample and are detected in different image acquisition condition, extracting a defect from among the associated defect candidates in a multi-dimensional feature quantity space, and outputting information of the extracted defect.


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