The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Sep. 07, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Tsung Lai, Tainan, TW;
Ching-Li Yang, Ping-Tung Hsien, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Shih-Che Huang, Chiayi, TW;
Chih-Sheng Chang, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a capacitor is disclosed. First, a substrate is provided, a bottom electrode and a capacitor dielectric layer are formed on the substrate, a conductive layer is formed on the capacitor dielectric layer, a patterned hard mask is formed on the conductive layer, a patterned hard mask is used to remove part of the conductive layer to form a top electrode, the patterned hard mask is removed, and a protective layer is formed on a top surface and sidewalls of top electrode. Preferably, the protective layer includes metal oxides.