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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9761687 B1

PDFFull Text
Date of Patent:
Sep. 12, 2017

Filed:

Jan. 04, 2015

Method of forming gate dielectric layer for mos transistor

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Han-Lin Hsu, Kaohsiung, TW;

Po-Lun Cheng, Kaohsiung, TW;

Chun-Liang Chen, Tainan, TW;

Meng-Che Yeh, Tainan, TW;

Shih-Jung Tu, Kaohsiung, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Daniel Luke

Assistant Examiner:

Khatib Rahman

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 21/0234 (2013.01); H01L 21/02326 (2013.01); H01L 21/02332 (2013.01); H01L 21/02337 (2013.01); H01L 21/28202 (2013.01); H01L 29/518 (2013.01); H01L 29/6659 (2013.01); H01L 29/513 (2013.01);
Abstract

A method of forming a gate dielectric layer for a MOS transistor includes the following steps. A gate dielectric layer is formed on a substrate. A nitridation process is performed on the gate dielectric layer. A multi-step post nitridation annealing process including two oxygen-containing annealing steps with different respective annealing temperatures is performed on the gate dielectric layer.

Find Patent Forward Citations

Hsu, Han-Lin. (2017). Method of forming gate dielectric layer for mos transistor (U.S. Patent No. 9761687). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9761687

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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