The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Mar. 07, 2016
Applicant:
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Inventors:
Kevin Rowell, Brighton, MA (US);
Cong Liu, Shrewsbury, MA (US);
Cheng Bai Xu, Southborough, MA (US);
Irvinder Kaur, Northborough, MA (US);
Jong Keun Park, Shrewsbury, MA (US);
Assignee:
Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/40 (2006.01); G03F 1/40 (2012.01); H01L 21/027 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/405 (2013.01); G03F 1/40 (2013.01); G03F 7/11 (2013.01); G03F 7/30 (2013.01); G03F 7/325 (2013.01); H01L 21/0273 (2013.01); H01L 21/0274 (2013.01);
Abstract
Photoresist pattern trimming compositions comprise: a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 50 to 98 wt % based on the solvent system. The compositions find particular applicability in the manufacture of semiconductor devices.