The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Jun. 03, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G03B 27/32 (2006.01); G03B 27/54 (2006.01); G03F 1/72 (2012.01); G03F 1/22 (2012.01); G03F 1/44 (2012.01); G03F 7/20 (2006.01); G03F 1/46 (2012.01); G03F 1/80 (2012.01); H01J 37/32 (2006.01); G03F 1/84 (2012.01);
U.S. Cl.
CPC ...
G03F 1/72 (2013.01); G03F 1/22 (2013.01); G03F 1/44 (2013.01); G03F 1/46 (2013.01); G03F 1/80 (2013.01); G03F 7/7065 (2013.01); G03F 7/70433 (2013.01); G03F 7/70591 (2013.01); H01J 37/32082 (2013.01); G03F 1/84 (2013.01); H01J 2237/334 (2013.01);
Abstract
The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by identifying a printable native defect within an EUV mask substrate that violates one or more sizing thresholds. A first section of the EUV mask substrate including the printable native defect is removed to form a concavity within the EUV mask substrate. A multi-layer replacement section that is devoid of a printable native defect is inserted into the concavity.