The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Jun. 19, 2015
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Shiyu Sun, San Jose, CA (US);

Naomi Yoshida, Sunnyvale, CA (US);

Benjamin Colombeau, Salem, MA (US);

Hans-Joachim L. Gossmann, Summit, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 21/26586 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 29/1054 (2013.01); H01L 29/4238 (2013.01);
Abstract

A method for forming a three dimensional device. The method may include directing ions to an end surface of an extension region of a fin structure, the fin structure extending perpendicularly from a substrate plane and having a fin axis parallel to the substrate plane, wherein the ions have trajectories extending in a plane perpendicular to the substrate plane and parallel to the fin axis, wherein a portion of the fin structure is covered by a gate structure defining a channel region, and wherein the end surface is not covered by the gate structure.


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