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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9748080 B1

PDFFull Text
Date of Patent:
Aug. 29, 2017

Filed:

Nov. 18, 2014

Cu—ga alloy sputtering target and method for producing same

Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Yuuki Yoshida, Naka-gun, JP;

Kouichi Ishiyama, Saitama, JP;

Satoru Mori, Okegawa, JP;

Assignee:

MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;

Attorney:

Locke Lord LLP

Primary Examiner:

John Brayton

Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/34 (2006.01); B22F 3/10 (2006.01); C22C 9/00 (2006.01); B22F 1/00 (2006.01); C22C 1/04 (2006.01); B22F 3/24 (2006.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); B22F 1/0003 (2013.01); B22F 1/0011 (2013.01); B22F 3/10 (2013.01); B22F 3/24 (2013.01); C22C 1/0425 (2013.01); C22C 1/0491 (2013.01); C22C 9/00 (2013.01); C23C 14/3414 (2013.01); B22F 2201/01 (2013.01); B22F 2302/45 (2013.01); B22F 2998/10 (2013.01); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01);
Abstract

According to the present invention, a Cu—Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu—Ga alloy crystal particle in the sintered body has a structure in which γ phase particles are dispersed in a γ-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu—Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1° C./min to 1.0° C./min, at a temperature having a range of 450° C. to 650° C.

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