The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Sep. 26, 2014
Applicants:

Hoya Corporation, Tokyo, JP;

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Takahiro Hiromatsu, Tokyo, JP;

Masahiro Hashimoto, Tokyo, JP;

Yasushi Sakaida, Toyama, JP;

Ryuta Mizuochi, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Masaki Nagai, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/50 (2012.01); G03F 1/82 (2012.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 1/50 (2013.01); G03F 1/82 (2013.01); G03F 7/11 (2013.01);
Abstract

A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.


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