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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9738787 B1

PDFFull Text
Date of Patent:
Aug. 22, 2017

Filed:

Aug. 16, 2013

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

Applicant:

Cheil Industries Inc., Gumi-si, Gyeongsangbuk-do, KR;

Inventors:

Hui-Chan Yun, Suwon-si, KR;

Taek-Soo Kwak, Suwon-si, KR;

Mi-Young Kim, Suwon-si, KR;

Sang-Hak Lim, Suwon-si, KR;

Kwen-Woo Han, Suwon-si, KR;

Go-Un Kim, Suwon-si, KR;

Bong-Hwan Kim, Suwon-si, KR;

Sang-Kyun Kim, Suwon-si, KR;

Yoong-Hee Na, Suwon-si, KR;

Eun-Su Park, Suwon-si, KR;

Jin-Hee Bae, Suwon-si, KR;

Hyun-Ji Song, Suwon-si, KR;

Han-Song Lee, Suwon-si, KR;

Seung-Hee Hong, Suwon-si, KR;

Assignee:

CHEIL INDUSTRY, INC., Gumi-Si, Gyeongsangbuk-Do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Marc Zimmer

Int. Cl.
CPC ...
C08G 77/54 (2006.01); B05D 3/02 (2006.01); B05D 3/04 (2006.01); C09D 1/00 (2006.01); H01B 3/46 (2006.01); C08G 77/62 (2006.01); C09D 183/14 (2006.01); C09D 183/16 (2006.01); H01B 3/30 (2006.01); H01B 3/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C09D 1/00 (2013.01); B05D 3/02 (2013.01); B05D 3/0254 (2013.01); B05D 3/0433 (2013.01); C08G 77/62 (2013.01); C09D 183/14 (2013.01); C09D 183/16 (2013.01); H01B 3/02 (2013.01); H01B 3/303 (2013.01); H01B 3/46 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02214 (2013.01); H01L 21/02216 (2013.01); H01L 21/02219 (2013.01); H01L 21/02222 (2013.01); H01L 21/02282 (2013.01); H01L 21/02326 (2013.01); H01L 21/02337 (2013.01);
Abstract

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

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