The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Mar. 13, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chia-Hao Hsu, Hsinchu, TW;

Pei-Cheng Hsu, Taipei, TW;

Chia-Ching Huang, Su-ao Township, TW;

Chih-Ming Chen, Hsinchu, TW;

Chia-Chen Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 21/66 (2006.01); H01L 21/02 (2006.01); G03F 1/00 (2012.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G03F 1/00 (2013.01); G06F 17/5068 (2013.01); H01L 21/02697 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 21/32051 (2013.01); H01L 21/32133 (2013.01);
Abstract

A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.


Find Patent Forward Citations

Loading…