The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Nov. 25, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Ming Lee, Tainan, TW;

Hung-Che Liao, Tainan, TW;

Kun-Tsang Chuang, Miaoli County, TW;

Wei-Chung Lu, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76837 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 21/02129 (2013.01); H01L 21/02164 (2013.01);
Abstract

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes receiving a substrate with two sections of conductors thereon that are adjacent to each other, and a valley between the two sections of the conductors, filling the valley with a first passivation material to form a passivation valley, applying a second passivation material overlying the two sections of conductors and the passivation valley and over the substrate, and removing the second passivation material overlying the two sections of conductors and the passivation valley, and the second passivation material over the substrate but not in contact with the two sections of conductors and the passivation valley.


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