The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Sep. 03, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ai-Jen Hung, Zhushan Township, TW;

Chen-Yen Huang, Jhunan Township, TW;

Shin-Rung Lu, Chu-Pei, TW;

Yen-Di Tsen, Chung-Ho, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70616 (2013.01); G03F 7/70141 (2013.01);
Abstract

In some embodiments, the present application is directed to a method and system for process control of a lithography tool. The method transfers a reference pattern to exposure fields of a reference workpiece to form pairs of overlapping reference layers. Misalignment between the overlapping reference layers is measured to form first and second baseline maps, and a Δ baseline map is formed from the first and second baseline maps. A production pattern is transferred to exposure fields of a production workpiece to form second production layers arranged over and aligned to first production layers. Misalignment between the first and second production layers is measured to form a production map. The Δ baseline map is transformed and subsequently added to the production map, to form a final production map. Parameters of a process tool are updated based on the final production map.


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