The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Oct. 14, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Henry D. Bathan, Singapore, SG;

Zigmund R. Camacho, Singapore, SG;

Jairus L. Pisigan, Singapore, SG;

Assignee:

STATS ChipPAC, Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 25/10 (2006.01); H01L 25/18 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/56 (2013.01); H01L 21/568 (2013.01); H01L 21/768 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 25/105 (2013.01); H01L 25/18 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81001 (2013.01); H01L 2224/81194 (2013.01); H01L 2224/81801 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/30105 (2013.01);
Abstract

A semiconductor device is made by forming first and second interconnect structures over a first semiconductor die. A third interconnect structure is formed in proximity to the first die. A second semiconductor die is mounted over the second and third interconnect structures. An encapsulant is deposited over the first and second die and first, second, and third interconnect structures. A backside of the second die is substantially coplanar with the first interconnect structure and a backside of the first semiconductor die is substantially coplanar with the third interconnect structure. The first interconnect structure has a height which is substantially the same as a combination of a height of the second interconnect structure and a thickness of the second die. The third interconnect structure has a height which is substantially the same as a combination of a height of the second interconnect structure and a thickness of the first die.


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