The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Aug. 23, 2016
Rohm Co., Ltd., Kyoto, JP;
Maxpower Semiconductor, Inc., San Jose, CA (US);
Masaki Nagata, Kyoto, JP;
Shigenari Okada, Kyoto, JP;
Mohamed Darwish, San Jose, CA (US);
Jun Zeng, San Jose, CA (US);
Peter Su, San Jose, CA (US);
ROHM CO., LTD., Kyoto, JP;
MAXPOWER SEMICONDUCTOR, INC., San Jose, CA (US);
Abstract
A semiconductor device according to the present invention includes a semiconductor layer having a trench, a first insulating film formed along an inner surface of the trench, and an upper electrode and a lower electrode embedded in the trench via the first insulating film and disposed above and below a second insulating film. An electric field relaxation portion that relaxes an electric field arising between the upper electrode and the semiconductor layer is provided between a side surface of the trench and a lower end portion of the upper electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile