The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Sep. 30, 2016
International Business Machines Corporation, Armonk, NY (US);
Isabel C. Chu, Melrose, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Leigh Anne H. Clevenger, Rhinebeck, NY (US);
Mona A. Ebrish, Albany, NY (US);
Gauri Karve, Cohoes, NY (US);
Fee Li Lie, Albany, NY (US);
Deepika Priyadarshini, Philadelphia, PA (US);
Nicole A. Saulnier, Albany, NY (US);
Indira P. Seshadri, Troy, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method for forming a semiconductor device includes blocking a first region of a wafer and forming a plurality of fins in a second region of the wafer. A protective conformal mask layer is deposited over the plurality of fins in the second region, the second region is blocked, and a plurality of fins are formed in the first region of the wafer using a variety of wet and/or dry etching procedures. The protective conformal mask layer protects the plurality of fins in the second region from the variety of wet and/or dry etching procedures that are used to form the plurality of fins in the first region.