The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
May. 16, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jung-Gun You, Ansan-si, KR;
Ki-Il Kim, Suwon-si, KR;
Gi-Gwan Park, Suwon-si, KR;
Sug-Hyun Sung, Yongin-si, KR;
Myung-Yoon Um, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate including a first trench, a first fin pattern on the substrate that is defined by the first trench, a gate electrode on the substrate, and a field insulating layer on the substrate. The first fin pattern includes an upper part on a lower part. The first fin pattern includes a first sidewall and a second sidewall opposite each other. The first sidewall is concave along the lower part of the first fin pattern. The second sidewall is tilted along the lower part of the first fin pattern. The field insulating layer surrounds the lower part of the first fin pattern. The gate electrode surrounds the upper part of the first fin pattern.