The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Aug. 22, 2015
Applicant:
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Inventors:
Carlos A. Fonseca, Austin, TX (US);
Benjamen M. Rathsack, Austin, TX (US);
Jeffrey Smith, Clifton Park, NY (US);
Anton J. deVilliers, Clifton Park, NY (US);
Lior Huli, Delmar, NY (US);
Teruhiko Kodama, Sanyo-Onoda, JP;
Joshua S. Hooge, Austin, TX (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01); H01L 21/66 (2006.01); H01L 21/306 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G03F 7/70783 (2013.01); H01L 21/0274 (2013.01); H01L 21/30625 (2013.01); H01L 22/20 (2013.01);
Abstract
Embodiments described relate to a method and apparatus for reducing lithographic distortion. A backside of a semiconductor substrate may be texturized. Then a lithographic process may be performed on the semiconductor substrate having the texturized backside.