The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

May. 19, 2010
Applicants:

Robert Anthony Ditizio, Petaluma, CA (US);

Tue Nguyen, Fremont, CA (US);

Tai Dung Nguyen, Fremont, CA (US);

Inventors:

Robert Anthony Ditizio, Petaluma, CA (US);

Tue Nguyen, Fremont, CA (US);

Tai Dung Nguyen, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/507 (2006.01);
U.S. Cl.
CPC ...
C23C 16/34 (2013.01); C23C 16/45523 (2013.01); C23C 16/507 (2013.01);
Abstract

A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.

Published as:

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