The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Jan. 30, 2013
Applicant:

Siliconware Precision Industries Co., Ltd., Taichung, TW;

Inventors:

Bo-Shiang Fang, Taichung, TW;

Ho-Chuan Lin, Taichung, TW;

Chia-Chu Lai, Taichung, TW;

Min-Han Chuang, Taichung, TW;

Li-Fang Lin, Taichung, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/14 (2006.01); H01L 23/13 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/76898 (2013.01); H01L 23/13 (2013.01); H01L 23/147 (2013.01); H01L 23/49822 (2013.01); H01L 23/49894 (2013.01); H01L 23/49816 (2013.01); H01L 2224/11 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/19011 (2013.01);
Abstract

A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.


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