The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Jul. 30, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/038 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); G03F 7/004 (2006.01); G03F 7/023 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); G03F 7/0046 (2013.01); G03F 7/0233 (2013.01); G03F 7/0236 (2013.01); G03F 7/0392 (2013.01); G03F 7/0395 (2013.01); G03F 7/0397 (2013.01); G03F 7/322 (2013.01); G03F 7/40 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract
A photoresist composition and a method for forming a patterned photoresist, and a method for forming an integrated circuit pattern are provided. A photoresist composition is provided. The photoresist composition includes a first polymer, a second polymer; and a solvent. The first polymer is more soluble than the second polymer in an aqueous solution, and the first polymer has a higher etching resistance than the second polymer.