The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jul. 18, 2014
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/402 (2013.01); C23C 16/45542 (2013.01); H01J 37/32091 (2013.01); H01J 37/32137 (2013.01); H01J 37/32724 (2013.01); H01J 37/32917 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01);
Abstract
The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes. Conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls. The disclosed embodiments achieve more uniform film quality as evidenced by more uniform wet etch rates and electrical properties throughout the film. The disclosed embodiments may use one or more of a relatively high deposition temperature, a relatively high RF power for generating the plasma, and/or relatively long RF plasma exposure duration during each cycle of the PEALD reaction.
Published as:
US2016020092A1; KR20160011149A; TW201618189A; US2016163539A9; US9685320B2; TWI679701B; KR102443554B1; KR20220127795A; KR102628080B1;