The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Apr. 26, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Hung-Chin Chung, Pingzhen, TW;
Shiang-Rung Tsai, Hsinchu, TW;
Hsien-Ming Lee, Changhua, TW;
Cheng-Lung Hung, Hsinchu, TW;
Hsiao-Kuan Wei, Longtan Township, Taoyuan County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01);
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate and a gate stack disposed on the semiconductor substrate. The gate stack includes a high-k dielectric material layer, a titanium-rich TiN layer over the high-k dielectric layer, and a metal layer disposed over the titanium-rich TiN layer. The metal layer includes aluminum.