The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Mar. 28, 2016
Qualcomm Incorporated, San Diego, CA (US);
Jae Sik Lee, San Diego, CA (US);
Hong Bok We, San Diego, CA (US);
Dong Wook Kim, San Diego, CA (US);
Jon Aday, Escondido, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Some implementations provide a semiconductor device (e.g., die, wafer) that includes a substrate, that is configured with trenches that are dry-etched into a surface of the substrate inside an area defined by scribe lines of the substrate. A crack stop structure is provided for the semiconductor device that includes a polymer dielectric layer coating that fills the trenches with a polymer dielectric material and provides a dielectric layer over the surface of the substrate inside the area. The polymer dielectric layer coating and trenches are configured to reduce cracking or chipping of the substrate in the area defined by scribe lines after cutting.