The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Nov. 14, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Joachim Hirschler, Villach, AT;
Michael Roesner, Villach, AT;
Markus Juch Heinrici, Viktring, AT;
Gudrun Stranzl, Goedersdorf, AT;
Martin Mischitz, Wernberg, AT;
Martin Zgaga, Rosegg, AT;
Assignees:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Technische Universitaet Graz, Graz, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/288 (2006.01); H01L 21/3213 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/288 (2013.01); H01L 21/3213 (2013.01); H01L 21/6835 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 24/94 (2013.01); H01L 24/95 (2013.01); H01L 23/562 (2013.01); H01L 24/05 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68368 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/03005 (2013.01); H01L 2224/039 (2013.01); H01L 2224/03009 (2013.01); H01L 2224/0332 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03505 (2013.01); H01L 2224/03848 (2013.01); H01L 2224/05794 (2013.01); H01L 2224/05847 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/94 (2013.01); H01L 2224/95 (2013.01);
Abstract
According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.